Nanotube Transistors: Record 30 GHz

    French scientists have created a carbon tube transistor on a silicon substrate, the limit frequency of which reaches 30 GHz. The group of record scientists included representatives from the Institute of Electronics, Microelectronics and Nanotechnology, and the condensed matter physics laboratory.

    This is not the first achievement of French scientists in the field of nanotechnology. Earlier, in 2006, they created a transistor operating at frequencies up to 6 GHz. As you can see, in just a year, researchers achieved more than decent results. Considering that the first nanotube transistor was created recently (in 2001), this achievement looks even more impressive.

    When creating transistors, researchers are faced with one serious problem: the complexity of manipulating and controlling the parameters of nanotubes during their growth on a silicon substrate. It was this task that the French scientists managed to brilliantly solve. They obtained a uniform array of nanotubes using the dielectrophoresis method, which allows nanotubes to be deposited not only on silicon, but also on organic substrates, since it works at room temperature.

    via CNRS , IXBT

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