Intel: mass production of PRAM by the end of 2007

    Intel plans in the first half of this year to begin shipment of small batches of workable memory chips with phase change memory (PCM), or, as it is also called, PRAM. Mass production of a new generation of memory should begin before the end of 2007. Recall that PRAM is interested in such major manufacturers as Fujitsu, Samsung, Renesas, Hitachi and others.

    Intel intends to release PRAM chips in compliance with 90-nm standards. Their density will be 128 Mbps. PRAM memory will be produced using technology purchased from Ovonyx, which provides for the use of chalcogenides. Intel Flash Technology Manager Ed Doller said the new memory can handle up to 100 million read / write cycles and has a minimum life of 10 years.

    Recall that last fall, Intel and ST Microelectronics introduced a 250-mm substrate with samples of PRAM-memory with a density of 128 Mbit. Then Intel promised to start shipping PRAM chips in November 2006, but then the delivery dates were postponed. Today's news indicates that the research phase is already nearing completion, and most likely by the beginning of 2008 we will see the first devices with built-in PRAM-memory (perhaps at CES 2008?).

    Source: www.3dnews.ru

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