Samsung Starts Mass Production of 3.2 TB 3D V-NAND SSDs for NVMe Servers

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    Samsung Electronics announced the launch of mass production of 3D V-NAND solid-state drives with NVMe interface and 3.2 TB memory, designed for use in high-performance enterprise server systems of the hi-end segment.



    The new SM1715 NVME PCIe SSD model uses Samsung's proprietary stack memory for HHHL form factor cards (half-height, half-length; half-height, half-length). This allowed us to create a 3.2 TB solid-state drive, which is twice as much as the previous 1.6 TB NVME SSD record. The SM1715 SSD is an advanced version of the XS1715 in terms of performance and reliability. This 2.5-inch SSD was awarded the 2014 Flash Memory Summit Best of Show Award as one of the most innovative developments in the field of flash memory.

    The new 3.2 TB NVMe SSD delivers sequential read speeds of up to 3000 MB / s and write speeds of up to 2200 MB / s. IOPS indicators (the number of operations with random data blocks of 4 KB) are 750 thousand and 130 thousand for reading and writing, respectively. In addition, the 3.2 GB solid state drive SM1715 is designed for 10 full daily dubbing cycles (DWPD) for five years. This ensures high reliability, which is critical for enterprise-class servers.

    Samsung SM1715 drive will be produced in two versions: 1.6 TB and 3.2 TB. The 2.5-inch XS1715 with NVMe interface will also be available in two options: 800 GB and 1.6 TB. Prices have not yet been announced.

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