Articles by tag: ferroelectric-memory

Non-volatile memory on aluminum nitride: ORNL method

ORNL scientists have created for the first time non-volatile memory on aluminum nitride using a helium ion beam, reducing power consumption by 40%. Learn about the breakthrough in microelectronics and prospects for chips.

Berkeley scientists discovered a new path to energy-efficient chips

UC Berkeley researchers found that an ultra-thin TiO₂ film less than 3 nm thick becomes ferroelectric. This enables faster and more energy-efficient chips for wearable electronics without changing the manufacturing process.