Samsung Electronics Launches Mass Production of Industry's First 8 Gigabit DDR4 Based on 20nm Process Technology
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Samsung Electronics announced the start of mass production of an advanced 8-gigabit DDR4 memory, as well as corresponding modules with a capacity of 32 GB based on a 20-nm process technology for powerful server systems and data centers.
Thanks to the development of the new 8-gigabit DDR4, Samsung will now be able to offer a full line of RAM produced by the 20-nm process technology, including 4-gigabit DDR3 modules for PCs and 6-gigabit LPDDR3 for mobile devices.
Earlier this month, the new 8-gigabit DDR4 chip has already found application in a 32 GB module. The speed of data transfer to a contact reaches 2400 Mbit / s, which is 29% more productive than server DDR3 memory modules (1866 Mbit / s). The 8-gigabyte DDR4 chip will allow you to create modules with a maximum capacity of up to 128 GB thanks to 3D TSV technology (Through Silicon Via).
The new high-density DDR4 memory also supports improved error correction features, which will increase its reliability during the assembly of corporate servers. In addition, in new chips and DDR4 modules, the operating voltage indicator is 1.2 volts, which is by far the least possible value.
Samsung Electronics announced the start of mass production of an advanced 8-gigabit DDR4 memory, as well as corresponding modules with a capacity of 32 GB based on a 20-nm process technology for powerful server systems and data centers.
Thanks to the development of the new 8-gigabit DDR4, Samsung will now be able to offer a full line of RAM produced by the 20-nm process technology, including 4-gigabit DDR3 modules for PCs and 6-gigabit LPDDR3 for mobile devices.
Earlier this month, the new 8-gigabit DDR4 chip has already found application in a 32 GB module. The speed of data transfer to a contact reaches 2400 Mbit / s, which is 29% more productive than server DDR3 memory modules (1866 Mbit / s). The 8-gigabyte DDR4 chip will allow you to create modules with a maximum capacity of up to 128 GB thanks to 3D TSV technology (Through Silicon Via).
The new high-density DDR4 memory also supports improved error correction features, which will increase its reliability during the assembly of corporate servers. In addition, in new chips and DDR4 modules, the operating voltage indicator is 1.2 volts, which is by far the least possible value.